The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Sep. 13, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Keiji Hosotani, Yokkaichi Mie, JP;

Fumitaka Arai, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

According to one embodiment, a semiconductor memory device includes the following structure. First and second semiconductor layers extend in a first direction. The second semiconductor layer is stacked apart from the first semiconductor layer in a second direction. First, second and third conductive layers and a first insulating layer extend in the second direction and intersect the first and second semiconductor layers. The first insulating layer is provided at a first distance from the first conductive layer in the first direction. The second conductive layer is provided at the first distance from the first insulating layer in the first direction. The third conductive layer is provided at the first distance from the second conductive layer in the first direction.


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