The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Mar. 08, 2023
Kioxia Corporation, Tokyo, JP;
Tomoya Inden, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a first region and a second region; a first insulating layer; a first gate electrode having a first semiconductor layer containing an impurity, a first conductive layer containing titanium, a second conductive layer containing nitrogen and either titanium or tungsten, and a third conductive layer containing tungsten; a second insulating layer provided on the third conductive layer and containing oxygen and silicon; a third insulating layer provided on the second insulating layer and containing nitrogen and silicon; a first contact provided on the first region; a second contact provided on the second region; and a third contact provided on the third conductive layer of the first gate electrode and penetrating through the second insulating layer and the third insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile