The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Oct. 04, 2023
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Seong Wan Ryu, Gyeonggi-do, KR;
Yoon Jae Nam, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/053 (2023.02);
Abstract
A semiconductor device includes a trench formed in a substrate; a gate dielectric layer suitable for covering a bottom surface and sidewalls of the trench; a first gate electrode suitable for gap-filling a bottom portion of the trench over the gate dielectric layer; a second gate electrode formed over the first gate electrode; and an anti-oxidation layer disposed at an interface between the first gate electrode and the second gate electrode.
Ryu, Seong. (2026). Semiconductor device and method for forming the same (U.S. Patent No. 12745385). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12745385
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile