The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Aug. 18, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yongjae Lee, Seongnam-si, KR;

Jihun Byun, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10D 48/40 (2025.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/22 (2023.02); H10D 48/40 (2025.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

Disclosed is a magnetic memory device comprising write and read word lines that extend in a first direction on a substrate, the write word line and the read word line spaced apart from each other in a second direction and parallel to a bottom surface of the substrate, first source/drain contacts on one side of the write word line and spaced apart from each other in the first direction, second source/drain contacts on one side of the read word line and spaced apart from each other in the first direction, magnetic tunnel junction patterns connected to the second source/drain contacts, and spin-orbit torque lines on the magnetic tunnel junction patterns and connected to the first source/drain contacts. The magnetic tunnel junction patterns are spaced apart from each other in a third direction. The spin-orbit torque lines are spaced apart from each other in the third direction.


Find Patent Forward Citations

Loading…