The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Apr. 18, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Su Bin Kong, Suwon-si, KR;

Sang-Ho Yun, Suwon-si, KR;

Woo Jin Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70625 (2013.01); G03F 7/0025 (2013.01); G03F 7/0392 (2013.01); G03F 7/2002 (2013.01); G03F 7/70466 (2013.01);
Abstract

A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etching process using the photoresist pattern as an etching mask to form a plurality of patterns, measuring a width of each of the plurality of patterns and a spacing between adjacent ones of the plurality of patterns, and identifying a cause of a defect in the photo process based on the measured width and the measured spacing.


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Kong, Su. (2026). Critical dimension inspection method and semiconductor device manufacturing method using the same (U.S. Patent No. 12743026). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12743026

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