The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Oct. 18, 2022
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

O-Kyun Kwon, Daejeon, KR;

Namje Kim, Daejeon, KR;

Ho Sung Kim, Daejeon, KR;

Miran Park, Daejeon, KR;

Seungchul Lee, Daejeon, KR;

Won Seok Han, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/132 (2006.01); C23C 14/04 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
C23C 14/042 (2013.01); G02B 6/132 (2013.01); G02B 2006/12173 (2013.01);
Abstract

Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.


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