The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jan. 30, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sanggyo Chung, Anyang-si, KR;
Chanmi Lee, Suwon-si, KR;
Hayoung Yi, Hwaseong-si, KR;
Kwanghee Cheon, Suwon-si, KR;
Seunghee Han, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of reference patterns and a peripheral pattern on a feature layer by using a first material such that the peripheral pattern is connected to end portions of the plurality of reference patterns; forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material; removing the plurality of reference patterns; forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using the first material; removing the plurality of first spacers so that the plurality of second spacers and the peripheral pattern remain on the feature layer; and patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask.