The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jan. 12, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Dimitrios Pavlopoulos, Glendale, CA (US);

Hansel Lo, San Jose, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/692 (2026.01); H10P 14/60 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69215 (2026.01); H10P 14/6308 (2026.01); H10P 14/6322 (2026.01); H10P 14/6339 (2026.01); H10P 14/69391 (2026.01); H10P 50/283 (2026.01);
Abstract

The present disclosure generally relate to semiconductor device fabrication, and more particularly, to methods of forming a bottom thick oxide layer in a high aspect ratio semiconductor structures. In certain embodiments, the method includes depositing a non-conformal oxide layer on in a feature on a substrate, performing an oxidation process to thermally grow an oxide layer beneath the deposited non-conformal oxide layer in the feature, and selectively stripping the non-conformal oxide layer to expose the thermally grown oxide layer.


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