The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Apr. 01, 2023
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Cory D. Cress, Springfield, VA (US);
Olaf M.J. Van 'T Erve, Falls Church, VA (US);
Steven P. Bennett, Owings, MD (US);
Abstract
A single layer of metamagnetic material with exchange bias comprising a single layer of FeRh, wherein the single layer of FeRh comprises ion irradiation, wherein the single layer of FeRh comprising ion irradiation is an exchange bias surface layer, and wherein the single layer of FeRh comprises an interface between a ferromagnetic (FM) region and an antiferromagnetic (AFM) region. A method to create a FM/AFM junction in a single layer of FeRh, comprising the steps of providing a layer of FeRh film, wherein the layer of FeRh film is an antiferromagnetic (AFM) film, implanting ions into the top portion of the FeRh film, creating via the step of implanting ions a ferromagnetic (FM) region in the top region, maintaining the antiferromagnetic (AFM) region of the bottom portion, and creating a FM/AFM junction in the single layer of FeRh.