The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Aug. 28, 2023
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Sung Ju Choi, Paju-si, KR;

Jae Yoon Park, Paju-si, KR;

Jung Seok Seo, Paju-si, KR;

Seo Yeon Im, Paju-si, KR;

Jin Won Jung, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/126 (2023.01); H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10K 59/126 (2023.02); H10D 30/6723 (2025.01); H10D 30/6733 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10K 59/1213 (2023.02);
Abstract

The disclosure relates to a display device including an oxide semiconductor pattern. The disclosure provides a driving thin film transistor and a switching thin film transistor using an oxide semiconductor pattern as an active layer. Each of the driving thin film transistor and the switching thin film transistor includes a light shielding pattern. The light shielding pattern includes a semiconductor material layer doped with P-type impurity ions. By virtue of the light shielding pattern including the semiconductor material layer, each of the driving thin film transistor and the switching thin film transistor exhibits an increase in threshold voltage and, as such, freedom of circuit design is secured.


Find Patent Forward Citations

Loading…