The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jan. 26, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong-Seok Leem, Suwon-si, KR;

Insun Park, Suwon-si, KR;

Rae Sung Kim, Suwon-si, KR;

Sangdong Kim, Suwon-si, KR;

Sang Ho Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/85 (2023.01); H10K 30/30 (2023.01); H10K 39/32 (2026.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01); H10K 101/30 (2023.01);
U.S. Cl.
CPC ...
H10K 30/85 (2023.02); H10K 30/30 (2023.02); H10K 30/353 (2023.02); H10K 39/32 (2023.02); H10K 85/211 (2023.02); H10K 85/30 (2023.02); H10K 85/622 (2023.02); H10K 85/6572 (2023.02); H10K 2101/30 (2023.02);
Abstract

An infrared photodiode includes an anode, a cathode, a photoelectric conversion layer between the anode and the cathode and including an infrared absorbing material, and a first auxiliary layer between the anode and the photoelectric conversion layer and a second auxiliary layer between the cathode and the photoelectric conversion layer. The first auxiliary layer and the second auxiliary layer each independently include an electron transport material that is configured to facilitate electron introduction, and/or facility electron transport, and/or inhibit hole movement. A sensor may include the infrared photodiode. An electronic device may include the infrared photodiode.


Find Patent Forward Citations

Loading…