The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Sep. 14, 2023
Applicant:

Auo Corporation, Hsinchu, TW;

Inventors:

Chao-Hsin Wu, Taipei, TW;

Chee Keong Yee, Taipei, TW;

Jia Ming Lin, Taipei, TW;

Chia-An Lee, Hsinchu, TW;

Kuan-Heng Lin, Hsinchu, TW;

Assignee:

AUO Corporation, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/816 (2025.01); H10H 20/80 (2025.01); H10H 20/824 (2025.01); H10H 20/841 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8162 (2025.01); H10H 20/816 (2025.01); H10H 20/824 (2025.01); H10H 20/841 (2025.01); H10H 20/862 (2025.01);
Abstract

A light emitting device including an active layer, a first semiconductor layer, a first contact layer, and a first current limiting layer is provided. The first semiconductor layer is disposed at a first side of the active layer. The first contact layer is disposed at a side of the first semiconductor layer away from the active layer. The first current limiting layer is disposed between the first contact layer and the active layer, and is provided with a first non-oxidizing region and a first oxidizing region located around the first non-oxidizing region. The first current limiting layer has a first surface facing the active layer and a second surface away from the first surface. The first oxidizing region is extended from the first surface to the second surface, and an oxygen content of the first oxidizing region is greater than an oxygen content of the first non-oxidizing region.


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