Silicon based quantum dot structure and quantum dot arrays incorporating blind contacts

Abstract

A novel and useful mechanism of improving the controllability of the electrostatic potential profile and electric field between barrier/control gates separating quantum dots (QD) in a quantum dot array (QDA) and creating elongated double quantum dot array 2D structures each having capability for a continuous tunneling within the array structure. Plunger gates implemented as blind contacts improve electric field control between barrier gates in a quantum dot array. Blind contacts create a dedicated control potential under multiple blind contact electrodes placed on a metal layer of a standard FDSOI process. They function to control potential well depths independently for neighboring quantum dots. Two or more coupled quantum dots within one elongated active area enables interconnection of neighboring quantum dot chains using a conductive semiconductor well. The blind contacts enable the implementation of charge sensors, precise precharge transistors, and linear and 2D quantum dot array.