The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Dec. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeongjin Lee, Seoul, KR;

Jeongsoon Kang, Gumi-si, KR;

Jihong Kim, Seoul, KR;

Changyong Um, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/809 (2025.01); H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

An image sensor includes a first lower chip, and an upper chip on and bonded to the first lower chip. The first lower chip and the upper chip collectively provide a plurality of pixels. A respective pixel of the plurality of pixels includes a photoelectric conversion element, a floating diffusion region, a ground region, and a transfer gate in the upper chip, and a plurality of lower transistors in the first lower chip. A first lower transistor among the plurality of lower transistors includes a plurality of first channel layers stacked vertically, and a first gate on the plurality of first channel layers.


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