The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Aug. 26, 2019
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Satoshi Seo, Sagamihara, JP;

Koji Kusunoki, lsehara, JP;

Takayuki Ikeda, Atsugi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/12 (2025.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/198 (2025.01); H10F 39/80377 (2025.01); H10D 30/6755 (2025.01); H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01);
Abstract

A thin imaging device including a light source is provided. The imaging device includes a light-emitting device which emits infrared light. Infrared light emitted by the light-emitting device and reflected by a subject is received by a photoelectric conversion device included in a pixel circuit. Since an EL element is used as the light-emitting device, a thin imaging device with a light source can be formed. A pixel circuit utilizing an oxide semiconductor transistor having a property of low off-state current is used, whereby image capturing by a global shutter method is possible and a distortion-free image can be obtained even when the subject is moving.


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