The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jan. 14, 2025
Applicant:

Nuvoton Technology Corporation Japan, Kyoto, JP;

Inventors:

Hiroto Katsuda, Kyoto, JP;

Masaaki Hirako, Kyoto, JP;

Takeshi Imamura, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H10D 64/60 (2025.01); H10D 84/00 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 89/911 (2025.01); H10D 64/605 (2025.01); H10D 84/141 (2025.01); H10D 84/839 (2025.01); H10D 89/931 (2025.01);
Abstract

A semiconductor device includes a semiconductor layer. The entire length of an outer peripheral side among outer peripheral sides of a first gate electrode region and the entire length of an outer peripheral side among outer peripheral sides of a first resistance element region match a portion of an outer peripheral side, among outer peripheral sides of the semiconductor layer, that is orthogonal to a border line and has the shortest distance to a first gate pad. Among four corner portions of an outer periphery of the first gate electrode region, only one corner portion is included in the outer peripheral sides of the first resistance element region, the only one corner portion having the shortest distance to the border line and the shortest distance to an outer peripheral side, among the outer peripheral sides of the semiconductor layer, that is orthogonal to the border line.


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