The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 17, 2024
Amazing Microelectronic Corp., New Taipei City, TW;
Sung-Chih Huang, Jiaoxi Township, TW;
Chih-Ting Yeh, Zhudong Township, TW;
Chia-Wei Chang, New Taipei City, TW;
AMAZING MICROELECTRONIC CORP., New Taipei City, TW;
Abstract
A transient voltage suppressor is provided, including a semiconductor substrate and a doped well of first conductivity type, an epitaxial layer of second conductivity type, first and second heavily doped regions of second conductivity type, and a third heavily doped region of first conductivity type in the doped well. The first heavily doped region is connected to a fourth heavily doped region of second conductivity type, and the fourth heavily doped region and a fifth heavily doped region of first conductivity type are disposed in the epitaxial layer. A sixth heavily doped region of second conductivity type is disposed in the epitaxial layer and connected in common with the third heavily doped region in the doped well. The fifth and second heavily doped regions are connected to I/O and ground, respectively. When applying a positive surged mode, the disclosed transient voltage suppressor is characterized by providing multiple discharging paths.