The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Aug. 02, 2022
Applicant:

Mediatek Inc., Hsinchu City, TW;

Inventors:

Yu-Lin Yang, Hsinchu City, TW;

Ming-Cheng Lee, Hsinchu City, TW;

Yuan-Fu Chung, Hsinchu City, TW;

Assignee:

MEDIATEK INC., Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 64/27 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 64/514 (2025.01); H10D 64/685 (2025.01); H10D 64/691 (2025.01); H10D 84/0144 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device structure includes a semiconductor substrate, a first device formed in the first region of the semiconductor substrate and a second device formed in the second region of the semiconductor substrate. The first device includes a first gate structure on the semiconductor substrate. The first gate structure includes a first gate dielectric layer on the semiconductor substrate and a first gate layer on the first gate dielectric layer. The second device includes a second gate structure on the semiconductor substrate. The second gate structure includes a second gate dielectric layer on the semiconductor substrate and a second gate layer on the second gate dielectric layer. The first gate dielectric layer of the first device and the second gate dielectric layer of the second device have different dielectric material compositions.


Find Patent Forward Citations

Quick Actions:

Yang, Yu-Lin. (2026). Semiconductor device structure having gate dielectric layers with different dielectric compositions and method of forming the same (U.S. Patent No. 12740136). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740136

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