The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Nov. 28, 2023
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Imec vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, GB;
Abstract
A conductive oxygen barrier layer, a stack comprising the conductive oxygen barrier layer, and method of forming the stack for a semiconductor device are provided. The method includes providing a semiconductor substrate, forming a conductive electrode layer on the semiconductor substrate, and forming a conductive oxygen barrier layer on the electrode layer, and then forming at least one complex oxide layer on the oxygen barrier layer. The forming of the oxygen barrier layer includes forming a silicon layer on the electrode layer and a platinum layer on the silicon layer. The forming of the at least one complex oxide layer comprises heating to a temperature in a range of 500-700° C. or higher, which results in the oxygen barrier layer comprising an alloy of platinum and silicon.