The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Dec. 30, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Kijoon Kim, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 62/13 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10D 62/235 (2025.01); H10D 62/151 (2025.01); H10D 62/80 (2025.01);
Abstract
A semiconductor device includes a semiconductor channel region on a substrate, and a contact layer that contacts a first side of the channel region. The channel region may include a transition metal dichalcogenide (TMD) monolayer as a semiconductor layer. The contact layer includes a first transition metal and a first chalcogen element bonded to the first transition metal. A gate structure is provided on the channel region, and a source/drain layer is provided that contacts the contact layer. The source/drain layer includes a metal that forms a covalent bond with the first transition metal within the contact layer.