The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Nov. 28, 2022
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Heimanu Niebojewski, Grenoble Cedex, FR;
Benoît Bertrand, Grenoble Cedex, FR;
Abstract
A method for fabricating a quantum device includes, in order, forming, on a semiconductor active zone resting on a substrate, a stack having at least one layer of gate material and one or more masking layers on the layer of gate material; forming, facing the active zone, a separation trench by etching through the one or more masking layers, the trench having a bottom revealing the at least one layer of gate material; forming, in the one or more masking layers, one or more pairs of masking blocks, each pair including a second masking block facing a first masking block, the first and second masking blocks being disposed on either side of the trench; and forming, in line with each masking block and by etching the at least one layer of gate material, a gate block so as to form one or more pairs of gate blocks.