The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jul. 26, 2023
Denso Corporation, Kariya-City, JP;
Hidefumi Takaya, Kariya-City, JP;
DENSO CORPORATION, Kariya-city, JP;
Abstract
A field effect transistor includes a plurality of p-type deep layers. The p-type deep layers protrude downward from a body layer, extend so as to intersect a trench when a semiconductor substrate is viewed from above, and extend from the body layer to a position below a bottom surface of the trench. Each of the p-type deep layers includes a low concentration region and a high concentration region having a higher p-type impurity concentration than the low concentration region and the body layer. The low concentration region is in contact with the body layer from below, and is in contact with the gate insulating film on a side surface of the trench located below the body layer. The high concentration region is in contact with the low concentration region from below.