The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jul. 28, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Daimotsu Kato, Kawasaki Kanagawa, JP;
Yosuke Kajiwara, Yokohama Kanagawa, JP;
Hiroshi Ono, Tokyo, JP;
Aya Shindome, Yokohama Kanagawa, JP;
Ikuo Fujiwara, Yokohama Kanagawa, JP;
Masahiko Kuraguchi, Yokohama Kanagawa, JP;
Tatsuo Shimizu, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Kawasaki, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes AlGaN (0≤x1<1). The second semiconductor region including AlGaN (0<x2<1, x1<x2). The first nitride region includes AlGaN (0<z1≤1, x2<z1). The first nitride region includes a first nitride portion. The first nitride portion includes a first position. The first position is a center of the first nitride portion. The third partial region of the first semiconductor region includes a first face facing the first nitride portion. A chlorine concentration at the first position is lower than a chlorine concentration at the first face.