The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 24, 2022
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Robert Coffie, Plano, TX (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A high electron mobility transistor (HEMT) device including a substrate, an AlGaN buffer layer on the substrate, where the buffer layer has a percentage of Al between 1% and 6%, an InGaN layer on the buffer layer, where the InGaN layer has about 10% of In, a GaN channel layer on the InGaN layer, and an AlGaN barrier layer on the channel layer. In one embodiment, the buffer layer is AlGaN, the InGaN layer is about 2 nm thick, and the barrier layer is AlGaN. The HEMT device may include a nucleation layer between the substrate and the buffer layer, a GaN spacer layer between the buffer layer and the InGaN layer, and/or an AlN interlayer between the channel layer and the barrier layer.