The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jul. 08, 2025
Applicant:

Zinite Corporation, Edmonton, CA;

Inventors:

Viraj Bhingardive, Edmonton, CA;

Douglas Barlage, Edmonton, CA;

Korel Dawkins, Edmonton, CA;

Alex MA, Edmonton, CA;

Assignee:

ZINITE CORPORATION, Edmonton, CA;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10P 50/00 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01);
Abstract

A thin-film transistor includes a source including a body of source material and a source carrier reservoir formed of reservoir material, a drain, and a layer of channel material positioned between source and the drain. A hardmask material may be used to pattern the source and drain. Remains of the hardmask may form the source carrier reservoir. The channel material and the reservoir material may be the same material, such as tin oxide.


Find Patent Forward Citations

Bhingardive, Viraj. (2026). Thin-film transistors and related methods of manufacture with channel and hardmask materials (U.S. Patent No. 12740084). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740084

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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