The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Sep. 28, 2021
Applicant:

Innoscience (Suzhou) Technology Co., Ltd., Suzhou City, CN;

Inventors:

Ronghui Hao, Suzhou City, CN;

Jinhan Zhang, Suzhou City, CN;

King Yuen Wong, Suzhou City, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/343 (2025.01); H10D 62/8503 (2025.01); H10D 64/112 (2025.01);
Abstract

A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source, a drain and a gate electrode, a doped nitride-based semiconductor layer, and a first field plate. The first field plate disposed over the doped nitride-based semiconductor layer. A vertical projection of the doped nitride-based semiconductor layer on the second nitride-based semiconductor layer overlaps with a vertical projection of the first field plate on the second nitride-based semiconductor layer, and a vertical projection of the gate electrode on the second nitride-based semiconductor layer is physically separated from the vertical projection of the first field plate on the second nitride-based semiconductor layer.


Find Patent Forward Citations

Hao, Ronghui. (2026). Nitride-based semiconductor device and method for manufacturing the same (U.S. Patent No. 12740081). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12740081

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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