The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jun. 02, 2023
Diodes Incorporated, Plano, TX (US);
Diodes Incorporated, Plano, TX (US);
Abstract
A power diode device includes a substrate. The substrate includes a core layer of a first conductive type, a first diffusion layer of the first conductive type, a second diffusion layer of a second conductive type, and a heavily doped region of the second conductive type. The core layer is located between the first diffusion layer and the second diffusion layer. A thickness of the core layer is greater than that of the second diffusion layer. The heavily doped region is located in the second diffusion layer and extends toward the core layer to form a PN junction between the heavily doped region and the core layer. A method for manufacturing the power diode device is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile