The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Aug. 30, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungmin Park, Suwon-si, KR;

Hanjin Lim, Suwon-si, KR;

Hyungsuk Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10D 1/68 (2025.01); H10B 12/315 (2023.02);
Abstract

An integrated circuit device includes a transistor disposed on a substrate and a capacitor structure electrically connected with the transistor, wherein the capacitor structure includes a first electrode, a dielectric film composite disposed on the first electrode, and a second electrode disposed on the dielectric film composite, and the dielectric film composite includes a first dielectric film including an anti-ferroelectric material, a second dielectric filler distributed and disposed in the first dielectric film, the second dielectric filler including a ferroelectric material, and a third dielectric filler distributed and disposed in the first dielectric film, the third dielectric filler including a paraelectric material and having an average diameter which is less than an average diameter of the second dielectric filler.


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