The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Sep. 07, 2022
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Takanori Matsuzaki, Atsugi, JP;
Tatsuya Onuki, Atsugi, JP;
Hitoshi Kunitake, Machida, JP;
Ryota Hodo, Atsugi, JP;
Yasuhiro Jinbo, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a novel structure is provided. The semiconductor device includes a first electrode, a transistor including a back gate, a capacitor including a pair of electrodes, and a first insulator that can have ferroelectricity between the back gate of the transistor and a semiconductor. The first insulator overlaps with the semiconductor with a second insulator therebetween. One of a source electrode and a drain of the transistor is electrically connected to the first electrode. The other of the source and the drain of the transistor is electrically connected to one electrode of the pair of electrodes. The pair of electrodes are each in contact with the first insulator and include a region where the pair of electrodes overlap with each other with the first insulator therebetween. As the first insulator, a ferroelectric is used.