The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Apr. 10, 2024
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
This application discloses a non-volatile memory. A device unit structure includes a vertical channel region and a gate structure. The gate structure covers one side surface of the vertical channel region. The gate structure includes a selection gate and a storage gate. The selection gate and the vertical channel region are spaced apart by a first gate dielectric layer. The selection gate and a semiconductor substrate are spaced apart by a first dielectric layer. The storage gate is located at a top of the selection gate, and the storage gate and the selection gate are spaced apart by a second dielectric layer. The storage gate and the vertical channel region are spaced apart by a second gate storage dielectric layer. A surface of the vertical channel region covered by the gate structure is used for forming a vertical channel. A second vertical channel part is controlled by the storage gate.