The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Sep. 08, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jihoon Chang, Suwon-si, KR;

Jaejoon Song, Suwon-si, KR;

Heonjun Ha, Suwon-si, KR;

Jongmoo Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10B 12/02 (2023.02); H10B 12/315 (2023.02); H10B 12/50 (2023.02); H10W 20/423 (2026.01);
Abstract

A semiconductor device includes a lower structure, an interlayer insulating layer on the lower structure, a conductive shielding line on the lower structure and penetrating through the interlayer insulating layer, a capping insulating layer on the interlayer insulating layer and the conductive shielding line, and a bit line on the lower structure and penetrating through the capping insulating layer and the interlayer insulating layer. An upper surface of the bit line is at a higher level than an upper surface of the conductive shielding line. A lower surface of the bit line is at a level equal to or lower than a level of a lower surface of the conductive shielding line.


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