The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Sep. 30, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Chan-Sic Yoon, Anyang-si, KR;
Kiseok Lee, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H10B 12/00 (2023.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/053 (2023.02); H10B 12/09 (2023.02); H10B 12/50 (2023.02); H10D 64/513 (2025.01); H10D 64/514 (2025.01); H10D 84/0144 (2025.01); H10B 12/30 (2023.02); H10D 64/512 (2025.01); H10D 84/0135 (2025.01);
Abstract
A semiconductor device includes a substrate having an active region and a gate structure crossing the active region. The gate structure may include a gate pattern penetrating an upper portion of the active region in a first direction perpendicular to a bottom surface of the substrate, a metal-containing pattern on the gate pattern, and a barrier pattern interposed between the gate pattern and the metal-containing pattern and extended to face opposite side surfaces of the metal-containing pattern.