The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Nov. 04, 2024
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

Byounghee Lee, Boise, ID (US);

Andrew Eugene Perkins, Boise, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/78 (2023.01); H04N 25/531 (2023.01); H04N 25/62 (2023.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H04N 25/78 (2023.01); H04N 25/531 (2023.01); H04N 25/62 (2023.01); H10F 39/199 (2025.01); H10F 39/805 (2025.01); H10F 39/806 (2025.01);
Abstract

An image sensor is disclosed. The image sensor includes a plurality of image pixels. Each image pixel includes a semiconductor region having a photodiode and a light-sensitive electrical element. Each image pixel further includes a primary metalens. The primary metalens includes a dielectric layer and a plurality of nanostructures arranged within the dielectric layer. Each of the plurality of nanostructures has a first refractive index that is greater than a second refractive index of the dielectric layer. The plurality of nanostructures is patterned within the dielectric layer to direct light received by the image pixel away from the light-sensitive electrical element.


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