The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jan. 12, 2024
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Inventors:

William Roeckner, Carpentersville, IL (US);

Terrie Mccain, Round Lake, IL (US);

Matthew Miller, Arlington Heights, IL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 2200/09 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

An active balun amplifier includes a first plurality of metal oxide semiconductor (MOS) transistors arranged in series, the first plurality of MOS transistors comprising a first input transistor of a first conductivity type, a second input transistor of a second conductivity type, and at least two common-gate transistors arranged in series between the first input transistor and the second input transistor, wherein a gate of the first input transistor and a gate of the second input transistor are tied to a common input, a second plurality of MOS transistors arranged in series, the second plurality of MOS transistors comprising a first common-source transistor of the first conductivity type, a second common-source transistor of the second conductivity type, and at least two cascode transistors arranged in series between the first common-source transistor and the second common-source transistor.


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