The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jun. 16, 2022
Applied Optoelectronics, Inc., Sugar Land, TX (US);
Dapeng Xu, Houston, TX (US);
Dion Mcintosh-Dorsey, Stafford, TX (US);
Huanlin Zhang, Sugar Land, TX (US);
Applied Optoelectronics, Inc., Sugar Land, TX (US);
Abstract
A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.