The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Apr. 18, 2023
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser device includes a submount and an edge-emitting semiconductor laser chip mounted to the submount by a junction-down method. The semiconductor laser chip includes a semiconductor substrate, a stacked growth layer in which m (m≥1) laser resonators are formed, m P electrodes, and an N electrode. When a beam emission direction is denoted as a z-axis, a direction of the thickness of the semiconductor substrate as a y-axis, and a direction orthogonal to the z-axis and the y-axis as an x-axis, the m laser resonators are located in an area of the stacked growth layer except directly under a center of the second face of the semiconductor substrate in the x-axis direction. More preferably, the m laser resonators are located on the side opposite to the center of the second face of the semiconductor substrate when viewed from the center of the first face thereof.