The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Apr. 22, 2022
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Yuantao Zhou, Shenzhen, CN;

Ming Wu, Shenzhen, CN;

Pengyu Zhang, Dongguan, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/185 (2006.01); H01P 11/00 (2006.01); H01Q 3/36 (2006.01);
U.S. Cl.
CPC ...
H01P 1/185 (2013.01); H01P 11/00 (2013.01); H01Q 3/36 (2013.01);
Abstract

A semiconductor switch device includes a first semiconductor layer, intrinsic layers, and second semiconductor layers that are stacked. There are at least two intrinsic layers. The second semiconductor layers are in a one-to-one correspondence with the intrinsic layers, and each second semiconductor layer is stacked on a side of a corresponding intrinsic layer away from the first semiconductor layer. The first semiconductor layer forms one PIN diode together with each first intrinsic layer and each second semiconductor layer. Any two adjacent PIN diodes are electrically isolated. Automatic parameter matching between the two PIN diodes is implemented by using a geometrically symmetric figure with centers of the two PIN diodes aligned. In addition, the entire semiconductor switch device has a compact structure.


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