The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Mar. 29, 2022
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventors:

Jixian Lv, Shanghai, CN;

Yuli Li, Shanghai, CN;

Siming Yang, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/04 (2006.01); H01M 4/505 (2010.01); H01M 4/525 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/0471 (2013.01); H01M 4/505 (2013.01); H01M 4/525 (2013.01); H01M 10/0525 (2013.01); H01M 2004/028 (2013.01);
Abstract

A composite cathode active material, which comprises a core layer comprising a cathode active material; a hydrogen fluoride barrier layer coating the core layer, the hydrogen fluoride barrier layer comprising a substance consisting of any one of Nb, Ba, Zr, Mn, Mg, Al and Ca or any combination thereof and any one of O, F, B and P or any combination thereof; and a physical barrier layer coating the hydrogen fluoride barrier layer. By using the composite cathode active material of the present invention, the contacting and reacting of the hydrogen fluoride with cathode active material are effectively prevented, the dissolution of the metal in the cathode active material is inhibited, the stability of the crystal structure in the bulk phase of the cathode active material is ensured, and the increase of the cycle retention rate and the decrease of the impedance growth rate are realized.


Find Patent Forward Citations

Loading…