The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Feb. 03, 2021
Applicant:

Christian-albrechts-universitaet Zu Kiel, Kiel, DE;

Inventors:

Rainer Adelung, Kiel, DE;

Sandra Hansen, Osterroenfeld, DE;

Joerg Bahr, Altenholz-Klausdorf, DE;

Juergen Carstensen, Kiel, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/1395 (2010.01); C25F 3/12 (2006.01); C30B 29/06 (2006.01); C30B 33/10 (2006.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/1395 (2013.01); C25F 3/12 (2013.01); C30B 29/06 (2013.01); C30B 33/10 (2013.01); H01M 4/044 (2013.01); H01M 4/0452 (2013.01); H01M 4/134 (2013.01); H01M 4/386 (2013.01); H01M 4/626 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01);
Abstract

A method for producing a silicon anode for secondary batteries. Mesoporous silicon is used for the anode to provide space for volume expansion in the course of intercalation, especially of lithium ions. However, instead of coating a metal film with silicon, here metal is deposited onto a monocrystalline etched silicon wafer. It is essential that the silicon is monocrystalline and that the two flat sides of the wafer are (100)-oriented, i.e., perpendicular to the (100)-direction of the volumetric crystal.


Find Patent Forward Citations

Loading…