The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Jul. 03, 2024
Applicant:

The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);

Inventors:

Marko J. Tadjer, Vienna, VA (US);

Travis J. Anderson, Gainsesville, FL (US);

Francis J. Kub, Arnold, MD (US);

Alan G. Jacobs, Rockville, MD (US);

Karl D. Hobart, Alexandria, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G21H 1/02 (2006.01); G21H 1/06 (2006.01); H10F 30/295 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
G21H 1/02 (2013.01); G21H 1/06 (2013.01); H10F 30/295 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/148 (2025.01); H10F 77/1246 (2025.01);
Abstract

Betavoltaic battery devices and methods of making are presented. In embodiments, an electrically inactive betavoltaic battery device comprises: a p-type semiconductor layer including at least one stable isotope that transforms into a beta emitter upon irradiation with thermal neutrons; and an n-type semiconductor beta-absorber layer configured to absorb beta particles; wherein the p-type semiconductor layer and the n-type semiconductor layer form a p-n diode, and wherein the electrically inactive betavoltaic battery device is configured to be transformed into an electrically active betavoltaic battery upon irradiation with thermal neutrons. The electrically inactive betavoltaic battery device may be transported to an irradiation facility, where it is irradiated with thermal neutrons to convert the inactive betavoltaic batter device to an active betavoltaic battery device.


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