The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 26, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Hyung Jin Choi, Gyeonggi-do, KR;

In Gon Yang, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 7/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 7/04 (2013.01); G11C 16/102 (2013.01);
Abstract

A memory device comprising: a memory cell array including a plurality of memory cell strings coupled between a plurality of bit lines and a common source line, and a plurality of word lines coupled to the memory cell strings, and a control circuit configured to: repeat a program loop including a program pulse application operation and a verification operation until a program operation is successfully performed on memory cells that are coupled to a selected word line, a selected cell string, and the plurality of bit lines, additionally perform a channel precharge operation together with the program pulse application operation and the verification operation starting from a selected program loop, and vary a level of a precharge voltage applied to the common source line in the channel precharge operation according to an operation temperature.


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