The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Sep. 27, 2024
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Mu Sun Kim, Gyeonggi-do, KR;

Yun Cheol Kim, Gyeonggi-do, KR;

Byoung Jun Park, Gyeonggi-do, KR;

Dae Myeong Lee, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/0483 (2013.01);
Abstract

Provided herein are a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a memory block including a plurality of memory cells, a voltage generation circuit configured to generate a read voltage and a pass voltage to be applied to word lines of the memory block during a read operation on the memory block, a temperature measurement circuit configured to measure a temperature before or after the read operation is performed, and output a temperature code corresponding to the measured temperature, and a block read counter configured to determine a read count increment of the memory block depending on the read operation based on the temperature code, and to update a read count value for the memory block by adjusting the read count value depending on the read count increment.


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