The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 20, 2023
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Ming-Cheng Lo, New Taipei City, TW;

Shih-Chang Huang, Hsinchu City, TW;

Jui-Chun Chang, Hsinchu City, TW;

Wu-Hsi Lu, Hsinchu City, TW;

Yu-Che Tsai, Hsinchu City, TW;

Shih-Hao Liu, Taoyuan City, TW;

Yen-Shih Ho, Taoyuan City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 2006/12097 (2013.01);
Abstract

A silicon photonic platform includes a composite substrate with a first photonic platform layer which includes a photonic platform material. A first signal layer covers the first photonic platform layer, has a top surface, and includes the photonic platform material and a first signal material. A photonic platform spectral signal is different from the first signal material spectral signal. The second photonic platform layer has a top surface, covers at least a portion of the top surface of the first signal, and includes the photonic platform material. The second photonic platform layer includes at least one ridge structure, and forms a silicon photonic platform together with the first photonic platform layer.


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