The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 15, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sunil Kim, Osan-si, KR;

Junghyun Park, Seoul, KR;

Duhyun Lee, Yongin-si, KR;

Byunggil Jeong, Anyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/81 (2025.01); G01S 7/481 (2006.01); G01S 7/4865 (2020.01); G01S 17/931 (2020.01);
U.S. Cl.
CPC ...
G01S 7/4814 (2013.01); G01S 7/4865 (2013.01); G01S 17/931 (2020.01); H10H 20/81 (2025.01);
Abstract

Provided is a light modulator including a first reflective layer, a cavity layer provided on the first reflective layer, and a second reflective layer provided on the cavity layer opposite to the first reflective layer, the second reflective layer including a plurality of lattice structures, wherein each lattice structure of the plurality of lattice structures have a pin diode structure and includes a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer, and wherein a thickness of the p-type semiconductor layer and a thickness the n-type semiconductor layer are in a range from 8% to 16% of a thickness of the intrinsic semiconductor layer.


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