The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Sep. 12, 2023
Abb Schweiz Ag, Baden, CH;
Aleksi Vulli, Helsinki, FI;
Gerd Schlottig, Uitikon Waldegg, CH;
Enea Bianda, Baden, CH;
Michal Orkisz, Cracow, PL;
Marcin Firla, Cracow, PL;
ABB SCHWEIZ AG, Baden, CH;
Abstract
An apparatus for performing the following. The apparatus maintains, in a memory, information on a computational model for thermal behavior of layers of an insulated-gate bipolar transistor, IGBT, module. The apparatus obtains measurements of the dissipated power at the semiconductors and the ambient temperature and determines one or more current values of one or more temperatures of the IGBT module based on a switching delay of the IGBT module. The apparatus calculates a current estimate of a joint state-parameter space of the computational model using a Bayesian filter and the computational model taking as inputs the dissipated power and the ambient temperature. The joint state-parameter space includes the one or more temperatures, one or more thermal loss parameters and one or more wear parameters. The one or more current values of the one or more temperatures are used as observations in the Bayesian filter.