The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Apr. 21, 2023
Queen's University AT Kingston, Kingston, CA;
The University of Western Ontario, London, CA;
Université Laval, Quebec, CA;
Cathleen M. Crudden, Kingston, CA;
Seán Barry, Ottawa, CA;
Paul Ragogna, Stratford, CA;
Ishwar Singh, Brampton, CA;
Alex Jeffrey Veinot, Middleton, CA;
Eden Ramona Goodwin, Ottawa, CA;
Peter George Gordon, Ottawa, CA;
Tianchi Zhang, Jiande, CN;
Peter Mcbreen, Québec, CA;
Justin Lomax, London, CA;
Queen's University at Kingston, Kingston, CA;
The University of Western Ontario, London, CA;
Université Laval, Quebec City, CA;
Abstract
A method of selective deposition that includes disposing in a deposition chamber a patterned substrate of side-by-side areas of metal and dielectric. The deposition chamber is connected to a bubbler that contains an N-heterocyclic carbenes (NHC) precursor. By heating the bubbler, gaseous free NHC is generated which is pulsed into the deposition chamber, where the NHC selectively chemisorbs onto the metal surface. Annealing after deposition of NHC improves surface patterning by removing stray metal from the dielectric section.