The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jul. 29, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a field insulating film formed on an epitaxial layer, a front surface electrode riding onto an inner peripheral end of the field insulating film, and an outer peripheral electrode riding onto an outer peripheral end of the field insulating film. To a surface portion of the epitaxial layer, connected is the front surface electrode, and in the surface portion of the epitaxial layer, formed is a well region extending up to the outside of the outer peripheral end of the front surface electrode. A moisture-resistant insulating film is formed so as to cover the outer peripheral end of the front surface electrode, an inner peripheral end of the outer peripheral electrode, and the field insulating film. On the moisture-resistant insulating film, formed is a semi-insulating film connected to the front surface electrode and the outer peripheral electrode which are exposed from the moisture-resistant insulating film.