The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
May. 20, 2022
Boe Technology Group Co., Ltd., Beijing, CN;
Hao Wu, Beijing, CN;
Liuqing Li, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present disclosure provides a method for manufacturing a nanowire, a method for manufacturing a thin film transistor, a thin film transistor and a semiconductor device. The method for manufacturing the nanowire includes: preparing an insulating layer on a first surface of a substrate; preparing a sacrificial layer on a surface of the insulating layer away from the substrate, and patterning the sacrificial layer to form a guide trench; preparing an inducing particle in the guide trench; preparing a precipitation layer on a surface of the sacrificial layer away from the substrate and in the guide trench, the precipitation layer covering the inducing particle; processing the precipitation layer to precipitate a preset element in the precipitation layer along the guide trench under an induction of the inducing particle to form a nanowire; and removing the sacrificial layer.