The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Apr. 11, 2023
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Eastchester, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
David Wolpert, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory structure that includes a dielectric stack of a ferroelectric dielectric layer and a paraelectric dielectric layer. At least the ferroelectric dielectric layer produces a negative capacitance to amplify an applied voltage. A thickness of the ferroelectric dielectric layer and the paraelectric dielectric layer results in simultaneous breakdown of a dielectric material in each of the ferroelectric dielectric layer and the paraelectric dielectric layer for the formation of conductive filaments upon being exposed to an electric field produced by the applied voltage amplified by the negative capacitance. The memory structure also includes a first electrode at a first end of the dielectric stack, and a second electrode at a second end of the dielectric stack. The applied voltage is applied to the memory structure through at least one of the first electrode and the second electrode.