The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Aug. 24, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Takeshi Iwasaki, Kuwana Mie, JP;

Zhu Qi, Yokkaichi Mie, JP;

Katsuyoshi Komatsu, Yokkaichi Mie, JP;

Jieqiong Zhang, Chiyoda Tokyo, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 5/08 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 5/08 (2013.01); H10B 61/10 (2023.02); H10N 50/85 (2023.02);
Abstract

A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.


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